Non-Gaussian Diffusion Model for Phosphorus in Silicon Heavy-Doped Junctions
نویسنده
چکیده
Besides common implant techniques, dopant diffusion enables steep diffusion profiles in heavily doped deep-source drain and ultra-shallow junctions as required in advanced microelectronic technology. Experimental phosphorus dopant diffusion profiles in silicon are described by a rational function diffusion (RFD) model, based on direct solution of Fick’s equations and suitable for actual work in junction engineering.
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